SUU06N10-225L vishay siliconix new product document number: 71254 s-01584?rev. a, 17-jul-00 www.vishay.com 1 n-channel 100-v (d-s) 175 c mosfet product summary v ds (v) r ds(on) ( ) i d (a) 0.200 @ v gs = 10 v 6.5 100 0.225 @ v gs = 4.5 v 6.0 d g s n-channel mosfet order number: SUU06N10-225L to-251 s gd top view and drain-tab absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 100 gate-source voltage v gs 20 v t c = 25 c 6.5 continuous drain current (t j = 175 c) b t c = 125 c i d 3.75 pulsed drain current i dm 8.0 a continuous source current (diode conduction) i s 6.5 avalanche current i ar 5.0 repetitive avalanche energy (duty cycle 1%) l = 0.1 mh e ar 1.25 mj t c = 25 c 20 b maximum power dissipation t a = 25 c p d 1.5 a w operating junction and storage temperature range t j , t stg ?55 to 175 c thermal resistance ratings parameter symbol typical maximum unit t 10 sec 40 50 junction-to-ambient a steady state r thja 80 100 c/w junction-to-case r thjc 6.0 7.5 c/w notes a. surface mounted on 1? x1? fr4 board. b. see soa curve for voltage derating.
SUU06N10-225L vishay siliconix new product www.vishay.com 2 document number: 71254 s-01584 ? rev. a, 17-jul-00 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 100 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 80 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 80 v, v gs = 0 v, t j = 125 c 50 a dss v ds = 80 v, v gs = 0 v, t j = 175 c 250 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 8.0 a v gs = 10 v, i d = 3 a 0.160 0.200 v gs = 10 v, i d = 3 a, t j = 125 c 0.350 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 3 a, t j = 175 c 0.450 v gs = 4.5 v, i d = 1.0 a 0.180 0.225 forward transconductance b g fs v ds = 15 v, i d = 3 a 8.5 s dynamic a input capacitance c iss 240 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 42 pf reverse transfer capacitance c rss 17 total gate charge c q g 2.7 4.0 gate-source charge c q gs v ds = 50 v, v gs = 5 v, i d = 6.5 a 0.6 nc gate-drain charge c q gd ds gs d 0.7 turn-on delay time c t d(on) 7 11 rise time c t r v dd = 50 v, r l = 7.5 8 12 turn-off delay time c t d(off) v dd = 50 v, r l = 7.5 i d 6.5 a, v gen = 10 v, r g = 2.5 8 12 ns fall time c t f 9 14 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 8.0 a diode forward voltage b v sd i f = 6.5 a, v gs = 0 v 0.9 1.3 v source-drain reverse recovery time t rr i f = 6.5 a, di/dt = 100 a/ s 35 60 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature.
SUU06N10-225L vishay siliconix new product document number: 71254 s-01584 ? rev. a, 17-jul-00 www.vishay.com 3 typical characteristics (25 c unless noted) 0 3 6 9 12 15 0 3 6 9 12 15 0 50 100 150 200 250 300 350 0 20406080100 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ) v gs ? transconductance (s) g fs 0 3 6 9 12 15 0246810 0 2 4 6 8 10 012345 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 3 6 9 12 15 0 3 6 9 12 15 012345 125 c 3, 2 v t c = ? 55 c v ds = 50 v i d = 6.5 a v gs = 10 thru 5 v 4 v v gs = 10 v v gs = 4.5 v t c = ? 55 c 25 c 125 c c oss c iss i d ? drain current (a) 25 c c rss
SUU06N10-225L vishay siliconix new product www.vishay.com 4 document number: 71254 s-01584 ? rev. a, 17-jul-00 typical characteristics (25 c unless noted) 0.0 0.5 1.0 1.5 2.0 2.5 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage (normalized) ? on-resistance ( t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) r ds(on) ) ? source current (a) i s 10 1 0.2 0.6 0.8 1.2 v gs = 10 v i d = 3 a t j = 25 c 0 0.4 1.0 t j = 175 c thermal ratings normalized effective transient thermal impedance safe operating area v ds ? drain-to-source voltage (v) ? drain current (a) i d 0.1 0.1 1 10 100 1 10 t c = 25 c single pulse normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 5 10 ? 3 10 ? 2 10 ? 1 110 maximum avalanche drain current vs. case t emperature t c ? case temperature ( c) ? drain current (a) i d 0 2 4 6 8 0 25 50 75 100 125 150 175 0.2 0.1 duty cycle = 0.5 10 ms 100 ms 1 s, dc 100 100 s 10 s 1 ms 0.05 0.02 single pulse limited by r ds(on) 10 ? 4
|
